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SFP9530
Electrical Characteristics (T C =25 o C unless otherwise specified)
P-CHANNEL
POWER MOSFET
Symbol
Characteristic
Min. Typ. Max. Units
Test Condition
BV DSS
Drain-Source Breakdown Voltage
-100
--
--
V
V GS =0V,I D =-250 μ A
V/ C I D =-250 μ A
? BV/ ? T J
Breakdown Voltage Temp. Coeff.
--
-0.1
--
o
See Fig 7
V DS =-80V,T C =150 C
V GS(th)
I GSS
I DSS
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
-2.0
--
--
--
--
--
--
--
--
--
-4.0
-100
100
-10
-100
V
nA
μ A
V DS =-5V,I D =-250 μ A
V GS =-20V
V GS =20V
V DS =-100V
o
R DS(on)
g fs
Static Drain-Source
On-State Resistance
Forward Transconductance
--
--
--
5.5
0.3
--
?
S
V GS =-10V,I D =-5.3A
V DS =-40V,I D =-5.3A
O 4
O 4
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
--
--
--
800 1035
160 240
60 90
pF
V GS =0V,V DS =-25V,f =1MHz
See Fig 5
t d(on)
t r
t d(off)
t f
Q g
Q gs
Q gd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain(“Miller”) Charge
--
--
--
--
--
--
--
13
22
45
25
30
5.4
12.2
35
55
100
60
38
--
--
ns
nC
V DD =-50V,I D =-10.5A,
R G =12 ?
See Fig 13
V DS =-80V,V GS =-10V,
I D =-10.5A
See Fig 6 & Fig 12
O 4 O 5
O 4 O 5
Source-Drain Diode Ratings and Characteristics
Symbol
Characteristic
Min. Typ. Max. Units
Test Condition
O
T J =25 C,I S =-10.5A,V GS =0V
T J =25 C,I F =-10.5A
I S
I SM
V SD
t rr
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
O 1
4
--
--
--
--
--
--
--
120
-10.5
-42
-4.0
--
A
V
ns
Integral reverse pn-diode
in the MOSFET
o
o
Q rr
Reverse Recovery Charge
--
0.53
--
μ C
di F /dt=100A/ μ s
O 4
O 2 L= 5.0 mH, I AS =-10.5A, V DD =-25V, R G =27 ? * , Starting T J =25 o o C
Notes ;
O 1 Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
O 3 I SD < _ -10.5A, di/dt < _ 400A/ μ s, V DD < _ BV DSS , Starting T J =25 C
O 4 Pulse Test : Pulse Width = 250 μ s, Duty Cycle < _ 2%
O 5 Essentially Independent of Operating Temperature
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